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MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench)
120 V, 53 mW, 4.8 A
NVLJS053N12MCL
Features
• Shielded Gate MOSFET Technology • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • Low Profile − 0.5 mm Maximum in MicroFET 2x2 mm • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Motor Drive
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
VDSS
120
V
VGS
±20
V
TA = 25°C
ID
4.8
A
Power Dissipation (Note 1)
TA = 25°C
PD
2.3
W
Power Dissipation (Note 2)
TA = 25°C
PD
0.
NVLJS053N12MCL Datasheet
