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NVLJD4007NZ
MOSFET – Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN
30 V, 245 mA
Features
• Optimized Layout for Excellent High Speed Signal Integrity • Low Gate Charge for Fast Switching • Small 2 x 2 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State = 25°C
VDSS VGS ID
30
V
"10 V
245 mA
Power Dissipation (Note 1)
Steady State = 25°C
PD
755 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case fo
NVLJD4007NZ Datasheet
