NVH4L045N065SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 105 nC).
High Speed Switching with Low Capacitance (Coss = 162 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NVH4L045N065SC1
Manufacturer	ON Semiconductor
File Size	346.10 KB
Description	SiC MOSFET
Datasheet	NVH4L045N065SC1 Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ.

Published: Jan 24, 2023 |