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MOSFET – Single N-Channel, SUPERFET) III, FRFET)
650 V, 65 A, 40 mW
NVH4L040N65S3F
Features
• Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− DC
Gate−to−Source Voltage
− AC (f > 1 Hz)
Drain Current Drain Current Drain Current
− Continuous (TC = 25°C) − Continuous (TC = 100°C)
− Pulsed (Note 3)
Power Dissipation Power Dissipation
(TC = 25°C) − Derate Above 25°C
Operating Junction and Storage Temperature Range
VDSS VGSS VGSS
ID ID IDM PD PD TJ, TSTG
650 ±30 ±30 65 45 162.5 446 3.
NVH4L040N65S3F Datasheet
