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NVH4L025N065SC1 - N-Channel MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 164 nC).
  • Low Capacitance (Coss = 278 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compliant Typical.

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Datasheet Details

Part number NVH4L025N065SC1
Manufacturer ON Semiconductor
File Size 320.44 KB
Description N-Channel MOSFET
Datasheet download datasheet NVH4L025N065SC1 Datasheet
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Full PDF Text Transcription

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ.
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