NVH4L018N075SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ. RDS(on) = 18 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 262 nC).
High Speed Switching with Low Capacitance (Coss = 365 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NVH4L018N075SC1
Manufacturer	ON Semiconductor
File Size	327.23 KB
Description	SiC MOSFET
Datasheet	NVH4L018N075SC1 Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750 V, M2, TO-247-4L NVH4L018N075SC1 V(BR)DSS 750 V RDS(ON) MAX 18 mW @ 18 V D ID MAX 140 A Features • Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ.

Published: Oct 13, 2024 |