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NVH025N65S3 - Automotive N-Channel MOSFET

Datasheet Summary

Description

SuperFET III MOSFET is On semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • AEC.
  • Q101 Qualified.
  • Max Junction Temperature 150°C.
  • Typ. RDS(on) = 19.9 mΩ.
  • Ultra Low Gate Charge (Typ. QG = 236 nC).
  • Low Effective Output Capacitance (Typ. COSS(eff. ) = 2062 pF).
  • 100% Avalanche Tested Typical.

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Datasheet Details

Part number NVH025N65S3
Manufacturer ON Semiconductor
File Size 234.31 KB
Description Automotive N-Channel MOSFET
Datasheet download datasheet NVH025N65S3 Datasheet
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Full PDF Text Transcription

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NVH025N65S3 Automotive N-Channel SUPERFET) III Easy-drive MOSFET 650 V, 75 A, 25 mW Description SuperFET III MOSFET is On semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with− stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. Features • AEC−Q101 Qualified • Max Junction Temperature 150°C • Typ. RDS(on) = 19.9 mΩ • Ultra Low Gate Charge (Typ. QG = 236 nC) • Low Effective Output Capacitance (Typ. COSS(eff.
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