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NVGS3130N - Power MOSFET

Datasheet Summary

Features

  • Leading Edge Trench Technology for Low On Resistance.
  • Low Gate Charge for Fast Switching.
  • Small Size (3 x 2.75 mm) TSOP.
  • 6 Package.
  • NV Prefix for Automotive and Other.

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Datasheet Details

Part number NVGS3130N
Manufacturer ON Semiconductor
File Size 115.12 KB
Description Power MOSFET
Datasheet download datasheet NVGS3130N Datasheet
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NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP−6 Package • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device Applications • DC−DC Converters • Lithium Ion Battery Applications • Load/Power Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage VDSS 20 V VGS ±8 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t ≤ 10 s Steady State t ≤ 10 s TA = 25°C TA = 85°C TA = 25°C TA = 25°C ID PD 5.6 4.1 A 6.2 1.1 W 1.
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