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DATA SHEET www.onsemi.com
MOSFET – Power, N-Channel
80 V, 1.75 mW
NVCR4LS1D7N08M7A
Features
• Typical RDS(on) = 1.31 mW at VGS = 10 V • Typical Qg(tot) = 130 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 1362
5080 × 3683 5060 ±15 × 3663 ±15 4874.7 × 3453.5 359.9 × 483.5 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS1D7N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C 40 to 66%
The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C.
NVCR4LS1D7N08M7A Datasheet
