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NVBGS6D5N15MC - N-Channel Power MOSFET

Datasheet Summary

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • Lowers Switching Noise/EMI.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NVBGS6D5N15MC
Manufacturer ON Semiconductor
File Size 473.15 KB
Description N-Channel Power MOSFET
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MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mW, 121 A NVBGS6D5N15MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note 2) Steady TC = 25°C ID State 121 A Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) PD Steady TA = 25°C ID State 238 W 15
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