NVBG150N65S3F - N-Channel Power MOSFET

Datasheet Summary

Description

SUPERFET® III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

700 V @ TJ = 150°C.
Typ. RDS(on) = 114 mW.
Ultra Low Gate Charge (Typ. Qg = 45 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 409 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are Pb.
Free and are RoHS Compliant Typical.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NVBG150N65S3F
Manufacturer	ON Semiconductor
File Size	328.22 KB
Description	N-Channel Power MOSFET
Datasheet	NVBG150N65S3F Datasheet
Additional preview pages of the NVBG150N65S3F datasheet.

📁 Similar Datasheet

NVBG022N120M3S - SiC MOSFET (onsemi)

Other Datasheets by ON Semiconductor

NVBG1000N170M1 - SiC MOSFET
NVBG110N65S3F - N-Channel MOSFET
NVBG190N65S3F - N-Channel MOSFET
NVBG015N065SC1 - SiC MOSFET
NVBG020N090SC1 - N-Channel MOSFET
NVBG020N120SC1 - SiC MOSFET
NVBG025N065SC1 - SiC MOSFET
NVBG040N120M3S - SiC MOSFET

Full PDF Text Transcription

Click to expand full text

MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 150 mW, 24 A NVBG150N65S3F Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. In addition, the D2PAK 7 lead package offers Kelvin sense.

Published: Jun 28, 2022 |