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NVBG095N065SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 70 mW @ VGS = 18 V Typ. RDS(on) = 95 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 50 nC).
Low Output Capacitance (Coss = 89 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
RoHS Compliant Typical.

ON Semiconductor

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NVBG095N065SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NVBG095N065SC1

Datasheet Details

Part number	NVBG095N065SC1
Manufacturer	ON Semiconductor
File Size	211.36 KB
Description	SiC MOSFET
Datasheet	NVBG095N065SC1 Datasheet
Additional preview pages of the NVBG095N065SC1 datasheet.

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Silicon Carbide (SiC) MOSFET – 70 mohm, 650 V, M2, D2PAK-7L NVBG095N065SC1 Features • Typ. RDS(on) = 70 mW @ VGS = 18 V Typ.

Published: Oct 13, 2024 |