NVBG020N120SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 20 mW.
Ultra Low Gate Charge (typ. QG(tot) = 220 nC).
Low Effective Output Capacitance (typ. Coss = 258 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NVBG020N120SC1
Manufacturer	ON Semiconductor
File Size	343.38 KB
Description	SiC MOSFET
Datasheet	NVBG020N120SC1 Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective Output Capacitance (typ.

Published: Apr 15, 2020 |