Datasheet4U Logo Datasheet4U.com

NV24C16MUW - 16-Kb EEPROM

Download the NV24C16MUW datasheet PDF. This datasheet also covers the NV24C02MUW variant, as both devices belong to the same 16-kb eeprom family and are provided as variant models within a single manufacturer datasheet.

Description

The NV24C02/04/08/16 are EEPROM Serial 2/4/8/16

Automotive Grade 1 devices organized internally as 16/32/64 and 128 pages respectively of 16 bytes each.

All devices support the Standard (100 kHz) and Fast (400 kHz) I2C protocol.

Features

  • Automotive AEC.
  • Q100 Grade 1 (.
  • 40°C to +125°C) Qualified.
  • Supports Standard, Fast and Fast.
  • Plus I2C Protocol.
  • 2.5 V to 5.5 V Supply Voltage Range.
  • 16.
  • Byte Page Write Buffer.
  • Fast Write Time (4 ms max).
  • Hardware Write Protection for Entire Memory.
  • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA).
  • Low power CMOS Technology.
  • More than 1,000,000 Program/Erase.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NV24C02MUW-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NV20FP G-LOW CURRENT HIGH VOLTAGE RECTIFIERS HV Component Associates
NV231 light weight DB Lectro
NV2M light weight DB Lectro

Other Datasheets by onsemi

Part Number Description
NV24C16LV 16-Kb CMOS Serial EEPROM
NV24C128MUW EEPROM
NV24C128WF EEPROM
NV24C02MUW 2-Kb EEPROM
NV24C04LV 4-Kb CMOS Serial EEPROM

Full PDF Text Transcription

Click to expand full text
EEPROM Serial 2/4/8/16-Kb I2C Automotive Grade 1 in Wettable Flank UDFN-8 Package NV24C02MUW, NV24C04MUW, NV24C08MUW, NV24C16MUW Description The NV24C02/04/08/16 are EEPROM Serial 2/4/8/16−Kb I2C Automotive Grade 1 devices organized internally as 16/32/64 and 128 pages respectively of 16 bytes each. All devices support the Standard (100 kHz) and Fast (400 kHz) I2C protocol. Data is written by providing a starting address, then loading 1 to 16 contiguous bytes into a Page Write Buffer, and then writing all data to non−volatile memory in one internal write cycle. Data is read by providing a starting address and then shifting out data serially while automatically incrementing the internal address count.
Published: |