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NTY100N10
Preferred Device
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available*
Applications
• PWM Motor Control • Power Supplies • Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage Drain−Gate Voltage (RGS = 1 MW) Gate−Source Voltage
− Continuous − Non−Repetitive (tp v 10 ms) Drain Current (Note 1) − Continuous @ TC = 25°C − Pulsed Total Power Dissipation (Note 1) Derate above 25°C
VDSS VDGR
100 100
V V
VGS VGSM
ID IDM PD
$ 20 $ 40
123 369 313 2.
NTY100N10 Datasheet
