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MOSFET – Power, Single N-Channel
80 V, 20 mW, 30 A
NTTFS6H860NL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3, 4)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
30
A
21
42
W
21
Continuous Drain Current RqJA (Notes 1, 3, 4)
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
8.1
A
5.7
3.1
W
1.
NTTFS6H860NL Datasheet
