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NTTFS5820NL
MOSFET – Power
60 V, 37 A, 11.5 mW
Features
• Low RDS(on) • Low Capacitance • Optimized Gate Charge • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
TA = 25°C TA = 100°C
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJC (Note 1)
Steady State
TA = 25°C TA = 100°C TC = 25°C TC = 100°C
Power Dissipation RqJC (Note 1)
TC = 25°C TC = 100°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
60
V
±20 V
11
A
7
2.7 W
1.
NTTFS5820NL Datasheet
