Click to expand full text
NTTFS4985NF
MOSFET – Power, Single, N-Channel, WDFN8
30 V, 64 A
Features
• Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
TA = 25°C TA = 85°C TA = 25°C
VDSS VGS ID
PD
30 ±20 22 15.9 2.69
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
32.4
TA = 85°C
23.
NTTFS4985NF Datasheet
