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NTTFS4965NF - Power MOSFET

Features

  • Integrated Schottky Diode.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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NTTFS4965NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 3.5 mW @ 10 V 5.2 mW @ 4.
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