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MOSFET - Power, Single P-Channel, WDFN8
-100 V, 120 mW, -13 A
NTTFS115P10M5
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are non−ESD Protected • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS −100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
TC = 25°C
ID
Current RqJC (Note 2) Steady TC = 100°C
Power Dissipation RqJC (Note 2)
State TC = 25°C
PD
TC = 100°C
−13
A
−8.0
41
W
16
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
−2.0 A
−1.1
0.9
W
0.
NTTFS115P10M5 Datasheet
