NTT2012N065M3S
Features
- Typical RDS(on) = 12.7 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 135 n C)
- High Speed Switching with Low Capacitance (Coss = 281 p F)
- 100% Avalanche Tested
- This Device is Halide Free and Ro HS pliant with Exemption 7a,
Pb-Free 2LI (on second level interconnection)
Applications
- SMPS, Solar Inverters, UPS, Energy Storage, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
- 10/+22 V
Continuous Drain Current
TC = 25 °C
Power Dissipation
Continuous Drain Current
TC = 100 °C
Power Dissipation
Pulsed Drain Current (Note 1)
TC = 25 °C
IDM tp = 100 ms
Continuous Source-Drain Current (Body Diode)
TC = 25 °C
VGS =
- 3 V
TC = 100...
