NTP75N03-06 - Power MOSFET

Datasheet Summary

Features

Ultra.
Low RDS(on), Single Base, Advanced Technology.
SPICE Parameters Available.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperatures.
High Avalanche Energy Capability.
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0.
Pb.
Free Packages are Available Typical.

ON Semiconductor

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Datasheet Details

Part number	NTP75N03-06
Manufacturer	ON Semiconductor
File Size	71.01 KB
Description	Power MOSFET
Datasheet	NTP75N03-06 Datasheet
Additional preview pages of the NTP75N03-06 datasheet.

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Full PDF Text Transcription

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NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery.

Published: Mar 22, 2016 |