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NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Non−Repetitive (tp = 10 ms)
Continuous Drain
Steady TC = 25°C
Current − RqJC (Note 1) State TC = 100°C
Power Dissipation − RqJC (Note 1)
Steady TC = 25°C State TC = 100°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche Energy − (L = 0.
NTP5864NG Datasheet
