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NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms)
Continuous Drain Current
Steady State
TC = 25°C TC = 100°C
Power Dissipation
Steady TC = 25°C State
VDSS VGS VGS
ID
PD
60 $20 30
97 68 150
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM TJ, Tstg
383 −55 to +175
Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH, IL(pk) = 56 A) Peak Diode Recovery (dV/dt)
IS EAS
dV/dt
97 157
4.
NTP5863N Datasheet
