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MOSFET - Power, Single N-Channel
80 V, 29 mW, 22 A
NTMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
22
A
15
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
33
W
17
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
ID
State
TA = 100°C
7
A
5
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
3.5
W
1.
NTMYS029N08LH Datasheet
