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MOSFET - Power, Single N-Channel, DFNW8
80 V, 2 mW, 229 A
NTMTS002N08MC
Features
• Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
TC = 25°C
ID
Current RqJC (Note 2) Steady
Power Dissipation
State
PD
RqJC (Note 2)
229
A
208 W
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
S
NTMTS002N08MC Datasheet
