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NTMS5835NL - Power MOSFET

Features

  • Low RDS(on).
  • Low Capacitance www. DataSheet4U. net.
  • Optimized Gate Charge.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Parameter Drain.
  • to.
  • Source Voltage Gate.
  • to.
  • Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA =.

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Full PDF Text Transcription

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NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features • Low RDS(on) • Low Capacitance www.DataSheet4U.net • Optimized Gate Charge • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 9.2 7.4 1.5 1.0 12 9.6 2.6 1.6 48 −55 to +150 20 69 37 260 A °C A mJ A °C 8 1 SO−8 CASE 751 STYLE 12 W A W G Unit V V A 40 V http://onsemi.com RDS(ON) MAX 10 mW @ 10 V 14 mW @ 4.
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