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NTMKE4890N
Power MOSFET
30 V, 155 A, Single N−Channel, ICEPAK
Features
• Low Package Inductance • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Compatible with MX Footprint and Outline • These are Pb−Free Devices
Applications
• CPU Power Delivery • DC−DC Converters • Optimized for both Synch FET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation (Note 1)
RqJA
TA = 25°C TA = 70°C TA = 25°C
VDSS VGS ID
PD
30 ±20 32 25.5 2.
NTMKE4890N Datasheet
