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NTMFS4C35N
Power MOSFET
30 V, 80 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA
TA = 25°C TA = 80°C
VDSS VGS ID
30 ±20 22.5
16.8
Unit V V A
Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C TA = 80°C
PD ID
2.
NTMFS4C35N Datasheet
