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NTMFS4926N - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Optimized for 5 V, 12 V Gate Drives.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 15.5 9.8 V V A Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 100°C PD ID 2.70 W 23.4 A 14.
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