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NTMFS4839NH - Power MOSFET

Features

  • Low RDS(ON) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Low RG.
  • These are Pb.
  • Free Devices.

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NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • Low RDS(ON) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID TA = 85°C 15 A 11 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA − tv10 sec TA = 25°C PD 2.17 W TA = 85°C 1.
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