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NTMFS10N3D2C - N-Channel MOSFET

Description

ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.

This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A.
  • Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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NTMFS10N3D2C MOSFET – Power Trench, N‐Channel, Shielded Gate 100 V, 151 A, 3.2 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 3.
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