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MOSFET – Power, Dual, N-Channel
80 V, 15 mW, 31 A
NTMFD6H846NL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3)
Steady TC = 25°C
ID
State
TC = 100°C
31
A
22
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
PD
TC = 100°C
34
W
17
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
ID
State
TA = 100°C
9.4
A
6.7
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
3.2
W
1.
NTMFD6H846NL Datasheet
