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NTMFD4C86N
PowerPhase, Dual N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
• Co−Packaged Power Stage Solution to Minimize Board Space • Minimized Parasitic Inductances • Optimized Devices to Reduce Power Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • System Voltage Rails • Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET 30 V
Q2 Bottom FET 30 V
RDS(on) MAX 5.4 mW @ 10 V 8.1 mW @ 4.5 V 2.6 mW @ 10 V 3.4 mW @ 4.5 V
ID MAX 20 A
32 A
D1 (3, 4, 9)
EFFICIENCY (%)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V VOUT = 1.2 V
75 VGS = 5 V FSW = 300 kHz
70 TA = 25°C 0 5 10 15 20 25 LOAD CURRENT (A) Figure 2.
NTMFD4C86N Datasheet
