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NTMFD4C50N
Dual N-Channel Power MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual N−Channel SO8FL
Features
• Co−Packaged Power Stage Solution to Minimize Board Space • Minimized Parasitic Inductances • Optimized Devices to Reduce Power Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • System Voltage Rails • Point of Load
http://onsemi.com
V(BR)DSS
Q1 Top FET 30 V
Q2 Bottom FET 30 V
RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 mW @ 4.5 V
ID MAX 18 A
27 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev.
NTMFD4C50N Datasheet
