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NTLJF1103P - Power MOSFET and Schottky Diode

Features

  • WDFN 2x2 mm Package with Exposed Drain Pad for Excellent Thermal Conduction.
  • Footprint Same as SC.
  • 88 Package.
  • 1.5 V VGS Rated RDS(on).
  • Low VF, 2 A Schottky Diode.
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environment.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number NTLJF1103P
Manufacturer onsemi
File Size 67.37 KB
Description Power MOSFET and Schottky Diode
Datasheet download datasheet NTLJF1103P Datasheet

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Full PDF Text Transcription

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NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.3 A, mCool] P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • 1.5 V VGS Rated RDS(on) • Low VF, 2 A Schottky Diode • Low Profile (< 0.
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