Datasheet4U Logo Datasheet4U.com

NTHL190N65S3HF - N-Channel Power MOSFET

Datasheet Summary

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 165 mW.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 316 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – NTHL190N65S3HF

Datasheet Details

Part number NTHL190N65S3HF
Manufacturer ON Semiconductor
File Size 516.47 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTHL190N65S3HF Datasheet
Additional preview pages of the NTHL190N65S3HF datasheet.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTHL190N65S3HF Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 165 mW • Ultra Low Gate Charge (Typ.
Published: |