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NTHL110N65S3F - Power MOSFET

Datasheet Summary

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 98 mW.
  • Ultra Low Gate Charge (Typ. Qg = 58 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 553 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number NTHL110N65S3F
Manufacturer ON Semiconductor
File Size 326.00 KB
Description Power MOSFET
Datasheet download datasheet NTHL110N65S3F Datasheet
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NTHL110N65S3F Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 30 A, 110 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 98 mW • Ultra Low Gate Charge (Typ.
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