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Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
NTHL1000N170M1
Features
• Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ. QG(tot) = 14 nC) • Low Effective Output Capacitance (typ. Coss = 11 pF) • 100% Avalanche Tested
• RoHS Compliant
Typical Applications
• Solar Inverters • Electric Vehicle Charging Stations • Electric Storing Systems • SMPS (Switch Mode Power Supplies) • UPS (Uninterruptible Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1700
V
Gate−to−Source Voltage
VGS −15/+25 V
Recommended Operation Values TC < 175°C VGSop −5/+20 V of Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
ID
State
4.
NTHL1000N170M1 Datasheet
