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DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
NTH4L160N120SC1
Features
• Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS • DC-DC Converter • Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS −15/+25 V
Recommended Operation Values TC < 175°C VGSop −5/+20 V of Gate−to−Source Voltage
Continuous Drain Current (Note 2)
Steady TC = 25°C
ID
State
17.
NTH4L160N120SC1 Datasheet
