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NTH4L060N090SC1 - SiC MOSFET

Features

  • Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (typ. QG(tot) = 87 nC).
  • Low Effective Output Capacitance (typ. Coss = 113 pF).
  • 100% UIL Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, TO-247-4L NTH4L060N090SC1 Features • Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ.
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