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NTGS3441P - Power MOSFET

Features

  • Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses TSOP.
  • 6 Surface Mount Package This is a Pb.
  • Free Device http://onsemi. com V(BR)DSS RDS(ON) TYP 91 mW @ 4.5 V.
  • 20 V 144 mW @ 2.7 V 188 mW @ 2.5 V P.
  • Channel Unit V V A 3 1 2 5 6.
  • 20 ±12.
  • 2.5.
  • 1.8.
  • 3.16 4.
  • 3.16 A ID MAX.

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Full PDF Text Transcription

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NTGS3441P Power MOSFET −20 V, −3.16 A, Single P−Channel TSOP−6 Features • • • • Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses TSOP−6 Surface Mount Package This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) TYP 91 mW @ 4.5 V −20 V 144 mW @ 2.7 V 188 mW @ 2.5 V P−Channel Unit V V A 3 1 2 5 6 −20 ±12 −2.5 −1.8 −3.16 4 −3.
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