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NTD4970N - N-Channel Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Three Package Variations for Design Flexibility.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NTD4970N
Manufacturer onsemi
File Size 135.59 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTD4970N Datasheet

Full PDF Text Transcription

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NTD4970N MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 36 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design Flexibility • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 11.6 A TA = 100°C 8.
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