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NTD3813N - Power MOSFET

Features

  • ăLow RDS(on) to Minimize Conduction Losses.
  • ăLow Capacitance to Minimize Driver Losses.
  • ăOptimized Gate Charge to Minimize Switching Losses.
  • ăThree Package Variations for Design Flexibility.
  • ăThese are Pb-Free Devices.

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NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThree Package Variations for Design Flexibility •ăThese are Pb-Free Devices Applications •ăDC-DC Converters •ăHigh Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 16 V VGS ±16 V TA = 25°C ID 13.8 A TA = 85°C 10.
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