NTBG045N065SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 105 nC).
Low Effective Output Capacitance (Coss = 168 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

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Datasheet Details

Part number	NTBG045N065SC1
Manufacturer	ON Semiconductor
File Size	317.95 KB
Description	SiC MOSFET
Datasheet	NTBG045N065SC1 Datasheet
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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VGS = 18 V Typ.

Published: Jun 19, 2024 |