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NSVT5551DW1 - Dual-Chip NPN General-Purpose Amplifier

Datasheet Summary

Features

  • This Device is Designed for General.
  • purpose High Voltage Amplifier.
  • Simplifies Circuit Design.
  • Reduces Board Space.
  • Reduces Component Count.
  • Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – NSVT5551DW1

Datasheet Details

Part number NSVT5551DW1
Manufacturer ON Semiconductor
File Size 103.63 KB
Description Dual-Chip NPN General-Purpose Amplifier
Datasheet download datasheet NSVT5551DW1 Datasheet
Additional preview pages of the NSVT5551DW1 datasheet.

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Full PDF Text Transcription

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Dual-Chip NPN General-Purpose Amplifier NSVT5551DW1 Features • This Device is Designed for General−purpose High Voltage Amplifier • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Notes 1, 2) (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range VCEO 160 V VCBO 180 V VEBO 6.0 V IC 200 mA TJ, TSTG −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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