Datasheet4U Logo Datasheet4U.com

NSVR0230M2T5G - Schottky Barrier Diode

Features

  • Extremely Fast Switching Speed.
  • Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA.
  • Low Reverse Current.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NSVA253 SAW FILTER New Japan Radio
NSVA254 SAW FILTER New Japan Radio
NSVA276 SAW FILTER New Japan Radio
NSVA277 SAW FILTER New Japan Radio
NSVA279 SAW FILTER New Japan Radio

Other Datasheets by onsemi

Part Number Description
NSVR0230P2 Schottky Barrier Diode
NSVR0240V2 Schottky Barrier Diode
NSVR0240V2T1G Schottky Barrier Diode
NSVR0320MW2T1G Schottky Barrier Diodes
NSVR0520V2 Schottky Barrier Diode

Full PDF Text Transcription

Click to expand full text
NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA  Low Reverse Current  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.
Published: |