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NSVF6003SB6 - RF Transistor

Features

  • High Gain (fT = 7 GHz typ).
  • High Current (IC = 150 mA).
  • Miniature and Thin 6 pin Package.
  • Large Collector Dissipation (800 mW).
  • AEC-Q101 qualified and PPAP capable.
  • Pb-Free, Halogen Free and RoHS compliance Typical.

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Full PDF Text Transcription

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NSVF6003SB6 Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
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