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NSCT817−25LT1G, NSCT817−40LT1G
General Purpose Transistors
NPN Silicon
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
45 V 50 V 5.0 V 500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C
Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate, (Note 2)
TA = 25°C Derate above 25°C
PD
300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device.
NSCT817-25LT1G Datasheet
