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NSB9435T1G - High Current Bias Resistor Transistor

Datasheet Summary

Features

  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc.
  • High DC Current Gain.
  • hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc.
  • SOT.
  • 223 Surface Mount Packaging.
  • ESD Rating.
  • Human Body Model: Class 1B.
  • Machine Model: Class B.
  • AEC.
  • Q101 Qualifie.

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Datasheet preview – NSB9435T1G

Datasheet Details

Part number NSB9435T1G
Manufacturer ON Semiconductor
File Size 139.42 KB
Description High Current Bias Resistor Transistor
Datasheet download datasheet NSB9435T1G Datasheet
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NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon Features  Collector −Emitter Sustaining Voltage − VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc  Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.
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